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development of advanced III-V and silicon-based semiconductor materials and optoelectronic devices using molecular beam epitaxy. The role will involve conducting independent research, developing new
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Growing materials: molecular-beam epitaxy, pulsed laser deposition, sputtering, ion-beam deposition, the MANGO multi-source system, and a glovebox cluster for 2D materials. Making devices: electron
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: Experience with diamond CVD or other wide- or ultra-wide-bandgap materials; epitaxy; substrate preparation; or polishing. Familiarity with diamond or silicon-carbide color centers, spin measurements, or
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pulsed laser deposition, atomic layer deposition and liquid-phase epitaxy of substituted garnet films, and comparing directly doped garnets against stacks in which the spin ions are hosted in an adjacent
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couple efficiently to the spin ions while long optical and spin lifetimes are preserved, using pulsed laser deposition, atomic layer deposition and liquid-phase epitaxy of substituted garnet films, and