Sort by
Refine Your Search
-
Country
-
Employer
-
Field
-
National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 17 days ago
. Description: This postdoctoral position centers on the development of next-generation ultraviolet (UV) detector technologies, with a strong emphasis on molecular beam epitaxy (MBE) for advanced materials growth
-
bulk crystals. Grow epitaxial antiferromagnetic oxide thin films, such as α-Fe2O3, Cr2O3, NiO, using magnetron sputtering system. Build and measure cavity coupling with antiferromagnetic magnon modes in
-
characterization (IV) will be part of the project. Detailed description of the work duties: Epitaxy, cleanroom work Experimental evaluation of semiconductor samples, with respect to nanowires. Supervision of degree
-
Laser Doping or Pulsed Laser Induced Epitaxy, allowing the fabrication of ultra-doped Si:B layers, well above the B solubility limit in Si. The films will be characterized by X-Ray Diffraction
-
@TU/e cleanroom facility (http://www.tue.nl/nanolab ), which hosts a state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor
-
in semiconductor laser/optical amplifier design and simulation Background in compound semiconductor (III-V) epitaxial materials/growth Knowledge and experience in photonic device testing and validation
-
Epitaxial Heterostructures Involving Metal Halides – NEHA” Grant Agreement n° 101095974 Please submit your application using the online form and include a detailed CV, university transcripts, cover letter
-
the synthesis of magnetic hybrid systems under ultra-high vacuum conditions (e.g., molecular beam epitaxy or sublimation of molecular systems in the characterization of macroscopic and microscopic magnetic
-
. The ideal candidate should have very good knowledge and experience in the areas of topological superconductivity, quantum materials, and superconducting devices. Technical experience in the areas of epitaxial
-
, especially with relevant material growth experience in material growth using molecular beam epitaxy or metal organic chemical vapor deposition, semiconductor device fabrication will be given priority