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of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
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characterization of FSS/metasurface-type devices made reconfigurable through the integration of phase change materials (PCM). Part of the role will also involve understanding the mechanisms underlying the insulator
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