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of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
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on the ultra-stable laser stations of the REFIMEVE infrastructure. The research will focus on developing experimental methods to exploit REFIMEVE's photonic and metrological systems for innovative measurement
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Laser Doping or Pulsed Laser Induced Epitaxy, allowing the fabrication of ultra-doped Si:B layers, well above the B solubility limit in Si. The films will be characterized by X-Ray Diffraction
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, which will be explored in the context of neuromorphic applications. The successful candidate will be responsible for: • Fabricating heterostructures by pulsed laser deposition (PLD); • Implementing
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, dimension, and build a vacuum chamber dedicated to the optical characterization of optomechanical systems. Integrate and operate a laser vibrometer to measure and analyze the devices' vibrational modes. Carry