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of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
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screen for tRNA optimisation. - Presentation of the work at team meetings and to our collaborators. The position is based at I2BC (CEA, CNRS, Université Paris-Saclay, Gif-sur-Yvette), within the Génomique
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