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We offer a fully funded, four-year PhD position at the University of Twente focused on developing circular production routes for silicon and silicon carbide, key materials for high-temperature and
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Vacancies PhD position in circular silicon and silicon carbide for additive manufacturing Key takeaways We offer a fully funded, four-year PhD position at the University of Twente focused
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We are working on creating a new type of Radio-Frequency Integrated Circuit technology based on optically induced plasmas in silicon to create photo-conductive switches. This combines low-cost
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on silicon nitride ribbon torsional resonators coupled directly via magnetic flux to a superconducting qubit. Building on the exciting flux-coupling concept pioneered in my group, you will bring mechanical
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; Portland, Maine; Oakland, California; San Francisco; Seattle; Silicon Valley; Arlington, Virginia; the Massachusetts communities of Burlington and Nahant; Toronto and Vancouver). Whilst the PhD will be a UK
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, electric mobility, industrial electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion
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electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion losses, but their performance is
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-efficiency spectral tuning; spatial/spectral demultiplexing via microlens integration; low-power tunable circuit design; and low-loss silicon nitride (Si₃N₄) components for visible and near-infrared. The role
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technologies. The goal of this project is to find a reliable packaging technique for silicon chips with embedded microfluidic channels that does not involve the use of glue or elastomer seals. The project will
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other markets, driving further innovation in healthcare and related technologies. The goal of this project is to find a reliable packaging technique for silicon chips with embedded microfluidic channels