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and characterisation of 2D topological materials — MBE growth, ARPES, STM, and transport Realising new intrinsic magnetic topological insulators — targeting dissipationless edge transport for device
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-of-the-art epitaxial reactors, including Metal-Organic Vapour-Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE) reactors, as well as a wide range of semiconductor characterization equipment (such as SEM
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