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track of a research programme on wafer-scale carbon nanotube CMOS. The work runs on two tracks: process modules are developed and optimised on coupon-scale samples at NUS, then transferred as a documented
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will focus on experimental post-CMOS and novel electronic devices (such as memristors) that behave like neurons. Specifically, the project targets 2D materials, phase transition materials, spintronic
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will focus on experimentally designing and building circuits of crossbars and other architectures that can employ post-CMOS devices and accelerate computing. Specifically, the project targets building
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will contribute to the design, implementation, verification and experimental characterisation of advanced integrated circuits for High Voltage CMOS (HV-CMOS) particle-detector ASICs. The major focus
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for back-end-of-line (BEOL) integration with CMOS. Key responsibilities include: • Develop and optimize ALD processes for oxide semiconductor channel materials (e.g., IGZO, ITO, IZO) and BEOL-compatible
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) electronic devices (e.g. superconducting devices, cryo-CMOS); or heterogeneous integration. Preferably be familiar with single-photon detection, heterogeneous integration, and quantum technologies concepts
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using the ULVAC Entron system. Coordinate with circuit designers and semiconductor foundries on CMOS front-end wafer development and back-end-of-line integration processes. Conduct MRAM electrical
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recombination processes in diamond and related defect systems for quantum sensing applications. • Diamond–hybrid devices: Develop hybrid device architectures incorporating diamond with novel and/or CMOS
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challenges to transition our UV-CVD prototype into a scalable 200mm/300mm commercial alpha tool. This technology solves the critical interconnect RC-delay bottleneck in sub-3nm advanced CMOS nodes and has
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collaborative and dynamic environment, you will apply your expertise in CMOS analogue and RF IC design to develop advanced RF components, support radar signal processing initiatives, and undertake sophisticated