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Job Description The Research Fellow will drive the development of atomic-layer-deposited (ALD) oxide semiconductor (OS) thin-film transistors and aggressively scaled short-channel OS devices
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process-of-record to an industry partner for verification on a 200 mm line. Key responsibilities: • Develop and optimise the core CNFET process modules — ALD high-k gate stacks, source/drain
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following is preferred: 2D materials processing (exfoliation, synthesis, transfer, etc.) Nanodevice fabrication in cleanroom environment (EBL, metallization, dry etching, ALD, etc.) Electrical transport
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