Location: UK Other
Silicon Carbide (SiC) devices offer improved efficiency, power density, operating limits, and functionality over traditional Silicon. They are considered key enablers of future medium voltage grids with increased share of renewables, full electric ships, drives for electric trains or specialised high-power instruments, where several kilovolts and hundreds or thousands of amperes need to be handled. However, it is still a challenge to design SiC devices scalable to handle the required high current, whilst also supporting such high voltages. It is also a challenge to package such devices without compromising the device operation.
Applicants are invited to undertake a 3-year PhD programme to tackle the challenge of developing next-generation SiC devices and packages that offer improved efficiency, higher power density, and increased reliability for medium voltage applications. The research will take place at the Power Electronics and Machines Centre, home of the Power Electronics, Machines and Control research group of the University of Nottingham. Although there is no funding attached with the post, depending on how eligibility criteria are met, exceptional candidates with first/distinction degree in Electrical, Electronics Engineering or Physics may compete for partial or full financial support (stipend and fees).
Please contact Assistant Prof. Neo Lophitis for further information.
Email: [email protected]