PhD Studentship in Packaging of Power Electronics

Updated: over 1 year ago
Location: Nottingham, ENGLAND
Job Type: FullTime
Deadline: 07 Jan 2023

Location: UK Other

The UK aims to cut carbon emissions by at least 68% from the 1990 level by the end of 2030. New cars and vans solely powered by diesel and petrol will be banned for sale from 2030. Electric vehicles will take the leading role in achieving this emission target as the latest models provide a number of advantages including superior driver comfort and lower emissions. However, there are a number of technical challenges which still impede their widespread adoption such as the cost, range anxiety and charging infrastructure.

Power electronics is a critical technology for many low-carbon energy systems such as renewable power generation and electric vehicles. Wide bandgap (WBG) semiconductor devices are thought to be the main enabler for the next generation power electronics. However, adverse effect of parasitic components associated with device packaging, circuit and system layouts and the uncontrollability of device inherent characteristics are limiting the use of wide-band gap (WBG) devices in high performance power electronics converters. This research will investigate the challenges of WBG semiconductor devices’ electrical and thermal modelling, packaging and electro-thermal optimisation issues. The work will be based in our dedicated packaging laboratories at the power electronics and machine centre of the University of Nottingham.

The successful candidate will be based at the Power Electronics, Machines and Control (PEMC) Group, within the Faculty of Engineering of the University of Nottingham. The group has state of the art experimental facilities for power electronics and electrical drives and is renowned for its ability to conduct pure and applied research at realistic power levels (up to 2MW continuous). Depending on how eligibility criteria are met, candidates will be entitled to full award (stipend at the UKRI rate and full tuition fees). UKRI 2022/23 rate is £17,668 per annum (tax free).

Candidate requirements:

The successful candidate is expected to be highly motivated and must hold/achieve a minimum of a Masters degree (or international equivalent) in Electrical or Electronic Engineering or a related discipline with excellent knowledge of Power Electronics Converters and Semiconductor Devices. It is desirable that the candidate has good knowledge of circuit design software (SPICE, PCB layout etc.) and some programming skills (MATLAB, Simulink, C etc.).

Please contact Dr Rishad Ahmed for further information. Email: [email protected]

International applicants must ensure they meet the academic eligibility criteria (including English language) as outlined before contacting the supervisor to express an interest in the project.

Please apply here www.nottingham.ac.uk/pgstudy/how-to-apply/apply-online.aspx

When applying for this studentship, please include ENG1610 and Dr Rishad Ahmed within the personal statement of the application. This will help in ensuring your application is sent directly to the academic advertising the studentship.