Wide bandgap power semiconductor devices, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN) have advanced electrical properties compared to Silicon (Si). When utilised in existing and new Power Electronic systems, a step improvement in terms of efficiency, power density, operating limits, and functionality can be achieved. This stems from the ability of SiC and GaN devices to sustain higher electric field, operate at higher temperature, require reduced cooling, and switch significantly faster. However, many challenges remain unresolved, particularly the long term reliable and stable operation of power electronic systems based on these new technologies.
Applicants are invited to undertake a 3 to 4 years PhD programme to investigate the performance and reliability of SiC and GaN device technologies and how performance and performance indicators can shift due to degradation. The research will include the determination of physics of ageing, methods to discriminate and monitor various degradation modes and prediction of the remaining lifetime. The research is considered exceptionally important, particularly for systems that operate in changeable, isolated, and challenging environments or where the degradation of operation can potentially be life threatening. Practical examples of scenarios which would benefit from this research include offshore wind turbines, aerospace power supplies, traction drives and electric vehicles.
The successful candidate will be based at the new building of the Power Electronics, Machines and Control (PEMC) Research Group, within the Faculty of Engineering of the University of Nottingham. The group is one of the largest, most well equipped, and most recognised groups in its field worldwide.
Fees: Please consult the university website - https://www.nottingham.ac.uk/fees/tuitionfees/202223/index.aspx
Funding: Depending on how eligibility criteria are met, exceptional candidates with first/distinction degree in Electrical, Electronics Engineering or Physics may compete for partial or full award (stipend and fees).
Please contact Assistant Prof. Neo Lophitis for further information. Email: [email protected]