PhD position on preparation and characterization of Ga2O3-diamond heterostructure UV photodetectors

20 Mar 2024
Job Information

Organisation/Company

Institute of Electrical Engineering, Slovak Academy of Sciences

Research Field

Physics » Solid state physics
Engineering » Materials engineering

Researcher Profile

First Stage Researcher (R1)

Country

Slovakia

Application Deadline

3 May 2024 - 22:00 (Europe/Bratislava)

Type of Contract

Temporary

Job Status

Full-time

Hours Per Week

37.5

Offer Starting Date

2 Sep 2024

Is the job funded through the EU Research Framework Programme?

Not funded by an EU programme

Reference Number

IEEDMS-MV-2024

Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

One of the most significant challenges of the recent years, related to the development of new electronic devices and having potential for major improvement of the current status in a vast variety of human activities can be found in the field of solar-blind (SB) ultraviolet (UV) photodetectors (PDs). Novel UV PDs, especially for deep-UV (DUV) optoelectronics (wavelengths shorter than 280 nm) are needed. These cannot typically be manufactured from conventional materials. This resulted in the development of ultrawide bandgap (UWBG) semiconductors (such as Alx Ga1−x N, hBN, Ga2 O3 , and diamond) and their utilisation for SB UV PDs. Gallium oxide (Ga2 O3 ), a naturally n-type semiconductor, represents a suitable UWBG material, showing a very good potential and capability to significantly improve the current state-of-the-art electronic devices. Furthermore, synthetic diamond has gained a strong reputation to be an exceptionally versatile material due to its attractive physical and chemical properties and availability of facile preparation of films with p-type conduction. On the other hand, it is very difficult to prepare p-type Ga2 O3 and n-type diamond.

In this work, we will target the development and detailed characterisation of new high-performance DUV SB PDs with p-n or p-i-n device structure, comprising n- and i-type Ga2 O3 and p-type diamond. Such heterostructure devices represent a favourable solution combining the best of the two UWBG worlds. The Ga2 O3 layers will be grown by liquid-injection metal-organic chemical vapour deposition (LI-MOCVD), a growth technique developed at IEE SAS. Polycrystalline diamond films will be prepared by MW plasma-enhanced CVD method in close cooperation with the Institute of Physics of the Czech Academy of Sciences in Prague. UV PDs and other electronic devices will be fabricated using modern techniques and tools available at the IEE SAS, i.e. optical or electron-beam lithography, reactive ion etching, and thin films deposition. The designed periodic structures, electric contacts, interdigitated arrays, and van der Pauw test structures will be prepared using a metallic mask prepared by the vacuum sputtering or evaporation through lithographically-prepared masks and patterned by a lift-off process.

The main goal of this PhD thesis is the fabrication, characterisation, and deep understanding of the effects at the Ga2 O3 -diamond heterostructure interface, and to assess their influence on the properties of such a heterojunction. In addition, focus will be also on testing of the properties of prepared UV photodetectors and their radiation hardness when exposed to the ionising radiation.

For further information about the scientific content please contact the supervisor: Dr. Marián Varga, [email protected]  

Requirements

Research Field

Engineering » Materials engineering

Education Level

Master Degree or equivalent

Research Field

Physics » Solid state physics

Education Level

Master Degree or equivalent

Languages

ENGLISH

Level

Excellent

Additional Information
Benefits

International community of young scientists (PhD, postdocs).

Participation at international conferences and workshops.

Unique research facilities.

Trainings and development possibilities (seminars, workshops, conferences).

Flexible working hours.

Cheap accommodation in campus.

8 weeks of holidays per year.

Eligibility criteria

graduated MSc with diploma

Selection process

3 year funded PhD position - PhD students receive a monthly scholarship of 1025.50 EUR and after midterm exam 1194 EUR. There are no taxes on scholarships. Additional funds are are also available (part-time job at the Institute).

The Insitute of Electrical Engineering SAS is an external institution, performing PhD studies in cooperation with the Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Bratislava

In the first round, the paper documents will be assessed, in the second round, short-listed candidates complying with the requirements will be invited for personal or Skype interviews foreseen in June 2024.

Applicants should provide the following information in their application:

1. Cover Letter.

2. A detailed CV including technical and analytical skills.

3. List of publications.

4. Copy of MSc diploma.

5. Abstract of the BSc and MSc thesis if applicable, or any previous research project.

6. Contact details of two referees who can provide reference letters. 

Applications must be submitted by e-mail to the address [email protected]  with a copy to [email protected]

Work Location(s)

Number of offers available

1

Company/Institute

Institute of Electrical Engineering SAS

Country

Slovakia

City

Bratislava

Postal Code

84104

Street

Dubravska cesta 9

Geofield

Where to apply

E-mail

[email protected]

Contact

State/Province

Bratislava

City

Bratislava

Website

http://www.elu.sav.sk/

Street

Dubravska cesta 9

Postal Code

84104

E-Mail

[email protected]

STATUS: EXPIRED