PhD position in "Reliability and performance optimization of the d-mode HEMTs and Schottky barrier...
Are you interested in a PhD position at UNIBO, co-funded by IMEC Belgium, in “Reliability and performance optimization of the d-mode HEMTs and Schottky barrier diodes in a p-GaN HEMT based GaN-IC platform”?
Please apply at https://www.unibo.it/en/teaching/phd/2022-2023/electronics-telecommunications-and-information-technologies-engineering
Brief project description: To unlock the full potential of the fast switching GaN power devices, it is advantageous to monolithically integrate the drivers and the GaN-based power devices, to reduce the parasitic inductance. The PhD position aims at optimize the performance and reliability of d-mode HEMTs and Schottky barrier diodes to be integrated with p-GaN HEMTs in an extended GaN-IC platform. The activity will be based on TCAD simulations, electrical measurements of DC and dynamic characteristics, and on-wafer reliability tests. The investigation should not only be based on experimental results, but supported by device physics insight in the underlying mechanisms.
For more information email at [email protected]
Required Background: Master’s degree in Electrical/Electronic Engineering, Material Science, Physics or equivalent, with a solid background in semiconductor physics. Experience in transistor and/or diode characterization and reliability is an advantage.
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