Fraunhofer Institute for Applied Solid State Physics IAF is one of the leading research facilities worldwide in the fields of III-V semiconductors and diamond. We develop electronic and optoelectronic devices and systems based on modern micro- and nanostructures. Our technologies find application in areas such as security, energy, communication, health, and mobility.
Increasing market demand for advanced electronic devices in combination with the imperatives of energy efficiency, sustainability, and meeting high performance expectations creates exciting opportunities for novel high electron-mobility transistors (HEMTs).
The goal of your work as a scientist will be discovering, defining and implementing new designs and specifications for the next generation of nitride-based HEMTs. You will focus on finding new ways of using metal-organic chemical vapor deposition (MOCVD) to grow high-quality nucleation layers on SiC and employing novel dopants to realize semi-insulating, carbon-free GaN buffers. You will also design innovative barriers with graded concentration or alloying with transition metals (like Scandium) and use simulation to optimize epitaxial development.
HEMTs will be manufactured in our high-level process line, and their functionality will be tested in terms of performance and reliability. We target to design, develop, and manufacture HEMT structures with improved linearity and power output reaching 10 W/mm at 50 GHz and beyond.
The position comes with the option to complete a PhD thesis based on these topics and we explicitly support candidates if they wish to take this opportunity.
What you will do
- You develop and optimize existing and novel MOCVD processes.
- You characterize epitaxial films employing optical and atomic force microscopy (AFM) to assess surface morphology as well as capacitance-voltage (CV) and Hall measurements to determine their electrical properties.
- Your combine this data with high-resolution x-ray diffraction (HRXRD), secondary-ion-mass-spectrometry (SIMS), and photoluminescence (PL) measurements to evaluate material quality.
- You carry out analyses of and develop models for the growth kinetics of epitaxy processes.
- You participate in and monitor the design, processing and characterization of electronic devices based on these epitaxial films.
- You use feedback from these results to improve the epitaxial structure and growth conditions and advance device performance.
- You manage research projects or subprojects and collaborate closely with other groups and departments within the institute.
- You contribute to the acquisition of publicly and privately funded research projects.
What you bring to the table
- A master’s degree or university diploma in one of the following or related fields: Physics, Chemistry, Crystallography, Material Science.
- You are interested in scientific questions involving epitaxy, crystal growing and growth kinetics.
- Ideally, you have prior experience with MOCVD or related epitaxial processes and at least a foundational understanding of semiconductor device physics.
- You are able to effectively work in a team, have an open mind and a show a high level of intrinsic motivation.
- You can communicate effectively in English (at least B2).
- Ideally, you have some knowledge of German or an interest in learning the language.
What you can expect
- A cooperative and open-minded team
- Excellent working conditions and infrastructure
- An extraordinary level of granted independence and broad access to our scientific equipment
- The opportunity to benefit from our further training and professional development programs#
- Company pension scheme
- A family-friendly workplace
The weekly working time is 39 hours. This position is also available on a part-time basis.The position is initially limited to 3 years. We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Appointment, remuneration and social security benefits based on the public-sector collective wage agreement (TVöD). Additionally Fraunhofer may grant performance-based variable remuneration components.
With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future.
Interested? Apply online now. We look forward to getting to know you!
Any questions? Please contact:
Kathrin Escher
[email protected]
Fraunhofer IAF
HR Department
Tullastraße 72
79108 Freiburg
Fraunhofer Institute for Applied Solid State Physics IAF
www.iaf.fraunhofer.de
Requisition Number: 70487 Application Deadline:
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