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Building on in-house fabricated devices, we have recently demonstrated the ability to shuttle electrons between gate defined quantum dots in Si/SiGe over 20 micron-scale distances using only four
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electrons between gate defined quantum dots in Si/SiGe over 20 micron-scale distances using only four different AC-voltages, independent of the distance covered [ Nat. Commun. 15, 2296 (2024) ]. Theoretical
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