Job-ID: 5012/22 | Department: Circuit Design | Salary: according TV-L EG 13| Working time: 40h/week (part-time work option) | Limitation: initially 2 years with option of extension for three more years | Entry Date: 01.09.2022
The position:
As a member of the research group High Data-Rate Communication Circuits within the department Circuit Design you will contribute to research into the design of circuits using the latest SiGe-BiCMOS technologies. Your tasks will include design and characterization of Sub-THz circuits enabling extremely high data-rate data communication. An international team of 6 scientists including very experienced scientists as well as several PhD students is looking forward to you. Flat hierarchies and mutual support are important to us. We see diversity of perspectives as a great advantage for our team. We strive for a balanced gender mix in our team.
Your PhD project:
Within the doctorate with the working title “Sub-THz SiGe transceiver for high-data rate data communication”, it is intended to develop novel circuits for Sub-THz data communication. The doctorate is supported by an experienced supervisor and accompanied within the framework of a supervision agreement. We aim together for a completion within 3-5 years. After one and a half years, the topic will be finally defined and the contract duration will be adjusted accordingly by mutual agreement to the foreseeable doctoral period.
Your qualifications:
You are holding a Master's degree in Electrical Engineering or a comparable study area. You are already experienced in schematic level and electro-magnetic simulations. Ideally, but not mandatory you have a background in high frequency on-wafer measurements.
Application deadline 15.03.2022