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physics, thermal conductivity & heat capacity, ….), as well as with the epitaxy of novel topological materials for mesoscopic studies. - MBE growth of GaAs/AlGaAs heterostructure. - Development of 2
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]. Furthermore, they can contain low toxic and abundant elements [3,7], and allow proper advanced integration on Si-based microelectronic platforms by molecular beam epitaxy (MBE) for which the leading team has a
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of Sn-based group IV semiconductors using CVD and molecular beam epitaxy (MBE) tools. (ii) Structural characterization of the SAG materials down to the atomic-level. (iii) Fabrication of infrared photonic
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