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) / InP contact layer (200 nm) / Si substrate The objective of the project is to develop a plasma etching process for this multilayer stack, enabling selective etch stopping on the InP contact layer, which
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for developing and optimizing plasma-based functionalization processes for ferrimagnetic nanoparticles. The successful candidate will be responsible for investigating the relationships between plasma parameters
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closely related field and have experience in several of following areas: • Solid-state synthesis and powder processing; • Spark Plasma Sintering (SPS) or other consolidation techniques; • Crystal
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