PhD: Ferroelectric Strain Coupling and Gating Integration Devices for Magnetic [...]

Updated: 9 months ago
Deadline: The position may have been removed or expired!

There are several PhD positions available within MagnEFi Innovative Training Network - Magnetism and the Effects of Electric Field . The consortium consist of both industrial and academic partners from Europe. Secondments (stays) at typically 3 partner institutions are planned.

Aalto: Ferroelectric strain coupling and gating integration devices for magnetic domain wall motion control

Reference: Aalto
Aalto University
Location: Espoo, Finland
Supervisor: Sebastiaan van Dijken
Start date: end of 2019 – early 2020
Duration: 3 years

Scientific project:

Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for energy-efficient magnetic logic and memory devices. This project explores electric-field-driven magnetic domain wall motion in thin magnetic films and patterned nanowires. The driving mechanism is either based on strain transfer from a ferroelectric layer or gating of a dielectric or solid-state ionic conductor. Combinations of these effects will also be explored to deliver new functionalities. The most successful structures will be exploited to actively tailor the transmission of magnetic spin waves.

The project is mostly experimental, but also involves micromagnetic simulations to interpret and verify measurement data. As a PhD student you will grow your own samples using magnetron sputtering and pulsed laser deposition and you will pattern the films into prototype devices using advanced photo and electron beam lithography. Sample characterization focuses on the variation of structural and magnetic properties under changing bias conditions.

As a PhD student, you will join the NanoSpin research group at Aalto University. The group focuses on cutting-edge research on electric-field controlled magnetism, magnonics, and magnetoplasmonics. The NanoSpin laboratory is equipped with instruments for advanced electronic, magnetic and magneto-optical measurements. Besides, you will have full access to the OtaNano research infrastructure for nano- and microtechnologies, comprising advanced equipment for nanofabrication and microscopy ( Aalto University is the largest university in Finland focusing on education, research and technology, science, business, and arts. Aalto University is located on the Otaniemi campus in Espoo (10 km from the city center of Helsinki), one of the largest high-tech hubs in Northern Europe.

Research at Aalto University is complemented by secondments focussing on modelling of electric-field-driven magnetic domain wall motion, multilayer growth, and device integration.

Planned secondments:

Istituto Nazionale di Ricerca Metrologica (Italy), Singulus Technologies (Germany), CNRS (France).

General requirements:

  • Be fluent in English
  • Have not been a resident or have conducted your main activity (studies, work, etc.) for more than 12 months within the last three years in the PhD position’s host country.
  • Be in the first four years of your research career. This is measured from the date you obtained a degree that allows you to enroll in a PhD program.
  • Have not yet been awarded a doctoral degree

Specific requirements/skills:


  • MSc degree or equivalent in a subject with good bases in one or more of these or related topics: condensed matter physics, nanoscience, applied physics, material science, nanoelectronics, physical-chemistry.
  • Excellent oral and written communication skills, well developed interpersonal communication
  • Enthusiastic, self-motivated, willing to learn in a multicultural environment


    • Experience in Nano/micro device fabrication
    • Knowledge of experiment automation and other programming skills


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