Last application date May 30, 2020 23:59
Department TW06 - Department of Electronics and information systems
Employment category Doctoral fellow
Contract Limited duration
Occupancy rate 100%
Vacancy Type Research staff
PhD position in the research group CMST (imec & Ghent University) under the supervision of Prof. Dr. Benoit Bakeroot and in close collaboration with imec (Dr. Stefaan Decoutere) in the field of gallium nitride devices for power electronic applications
Gallium nitride (GaN) is anticipated to be the next-generation power semiconductor. With a higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform Si-based power chips. The first-generation GaN-based power devices will play a key role in the power conversion within battery chargers, smartphones, computers, servers, automotive, lighting systems and photovoltaics. Imec has been pioneering GaN technology for more than 15 years, evolving 200mm/8-inch wafers to realize GaN-on-Silicon devices at lower costs while maintaining world-class performance.
Today, the GaN technology is taken to a higher level of maturity, including a GaN-IC platform where e.g. half bridges and partial gate drivers are integrated on chip. In order to be able to design in this GaN-IC technology, reliable compact models for GaN components are needed. The existing compact models for the enhancement-mode transistors today are derived from Schottky-type depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs). A dedicated compact model for the enhancement mode p-GaN gate AlGaN/GaN HEMT for instance is still lacking. The open position will focus on the compact modelling and validation of components for the GaN-IC technology in close collaboration with imec.
The student will be embedded in the research group CMST at the Ghent University. He/she will work towards a doctoral degree under the supervision of Prof. Dr. Benoit Bakeroot. The PhD scholarship runs over a period of 48 months. The PhD student will also work in collaboration with the GaN team at imec. The PhD student will develop compact models for GaN power devices. To this end, the student will have access to imec’s GaN components as reference material. The student will perform on-wafer measurements and will have access to specialized measurement systems, in order to be able to calibrate the developed compact models. In addition, the student will have access to technology computer aided design (TCAD) software. CMST has a long-standing experience in TCAD simulations for these GaN components. These finite-element- based numerical simulations help to gain insight in the device operation and will help the student to build physically based compact models.
Profile of the candidate
The PhD candidate must hold a Master of Science degree in (engineering) physics or electrical engineering. The degree should be obtained before the prospective starting date of October 1, 2020. The PhD candidate must have followed at least one specialized course on semiconductor device physics and must have a strong interest in semiconductor device physics, analytical modelling, and scientific programming (experience with e.g. Python is a strong asset). The Phd candidate should have an open attitude towards learning new research skills, should be a team player, and fluency in English is necessary.
How to apply
You can apply via email to Katrien.Vanneste@ugent.be , using the subject line “Application PhD: GaN compact modelling”. Please provide the following:
1. A full CV including your academic/education history, experience with experimental work and programming, list of publications where applicable.
2. A motivation letter containing research interests, skills, career plans, reasons for applying for this program (1 or 2 pages),
3. A list of at least two references with contact details.
4. Copies of relevant diplomas and grade lists (transcript of records of Bachelor and Master Courses).
5. For applicants from non-English speaking countries, please attach copies of recent English language certificates where available.
The files should be in pdf format and can be combined to one file. From all applications, a short-list of candidates will be made, who will be contacted for an interview (possibly over Skype/Teams). The deadline for application is May 31, 2020.
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