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feeds M2 Internship – Perturbation-based Bayesian learning with resistive memories 178 / 815 vacancy Vacancy details Position description Category Micro and nano technologies Contract Internship Job
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Memory devices (resistive NVM notably) and novel computing solutions (neuromorphic solutions, in-memory computing, etc.). Our laboratory brings together expertise in nanoelectronic devices and technology
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, in this project we are using ferroelectric memories, which can calculate AI algorithms from the field of deep learning in resistive crossbar structures with extremely low power consumption and high
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