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of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
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/metal phase transition during the optical control of PCM materials (primarily GeTe-type compounds). As part of the OPALE project, we are offering an 11-month postdoctoral research position to tackle
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of the technology, one of whose key areas (the subject of this postdoctoral position) is to design and develop innovative materials combining catalytic efficiency, electrical conductivity, and mechanical strength, in
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