Sort by
Refine Your Search
-
Category
-
Program
-
Field
-
FieldTechnologyYears of Research ExperienceNone Additional Information Eligibility criteria • PhD in microwave engineering, RF/microwave circuit design and simulation, or radiofrequency material characterization
-
/metal phase transition during the optical control of PCM materials (primarily GeTe-type compounds). As part of the OPALE project, we are offering an 11-month postdoctoral research position to tackle
-
Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description The postdoctoral researcher will carry out their activities within
-
for studying and engineering electronic properties in quantum materials. By stacking different two-dimensional (2D) materials, it is possible to create systems with new and tunable properties. In
-
based on PDMS, thermoplastics, or other polymeric materials; Surface chemistry and functionalization for the engineering of biointerfaces; Data analysis, signal processing, and scientific programming
-
carried out within the OML (Optics, Materials and Lasers) team at CIMAP, a dynamic and international research group comprising more than 20 researchers, engineers, postdoctoral fellows, and students working
-
(Label of Excellence - 00180410, Normandy Region) which aims to develop a new perspective on interfacial interactions for a tailored performance of porous materials. This project aims to apply and combine
-
Experience1 - 4 Research FieldPhysicsYears of Research Experience1 - 4 Additional Information Eligibility criteria PhD in chemistry, physical chemistry, chemical engineering, or materials science. - Experience
-
materials under extreme conditions of intense magnetic fields (exceeding 90 T) and very low temperatures (down to 100 mK). Scientific targets will be to investigate the properties of quantum materials (UTe2
-
and light irradiation. The activities planned during the postdoctoral fellowship include: - heavily boron-doped silicon (Si:B) thin film epitaxial growth using nanosecond laser doping within the EPLA