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7 May 2024 Job Information Organisation/Company CEA, Leti Research Field Engineering Engineering » Electronic engineering Physics Researcher Profile Recognised Researcher (R2) Leading Researcher (R4
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, INPHYNI, C2N, CEA-LETI) whose joint objective is to establish a national technological sector for the development of new generation integrated optical components based on the use of LiNbO3 nanofilms
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with CEA Leti in Grenoble. The doctoral candidate will be situated within the wide band gap semiconductors team, renowned for its 30 years of expertise in boron-doped diamond synthesis and fundamental
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leading environment at CEA LETI in the field of hardware security. You will also join a dynamic team at the heart of the physical object security ecosystem in France. Profil du candidat You hold a doctorate
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carried out in the DOP team's laboratory. Short stays in CEA-Leti in Grenoble may also be required during the thesis. Qualifications Candidates must hold a master's degree in physics or photonics
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transistors in connection with the CRHEA and CEA Leti laboratories, in order to define the optimal stacking of the different GaN epitaxial layers and to propose device architectures compatible with