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: heterojunction bipolar transistors, high electron mobility transistors (HEMTs); (2) Low-power devices: novel transistors (tunneling field-effect transistors, and Non-silicon metal-oxide-semiconductor field-effect
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operating thin film deposition equipment. • Specific experience with MOCVD growth of compound semiconductors, oxides and/or chalcogenide thin films is a plus. • This position requires excellent
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National Lab Screening and receive approval to the National Lab. Excellent foundation on semiconductor device physics, reliability. Hands on experience with device and system (FPGA, memory) characterization
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