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mechanical properties, making it a suitable material for MEMS. Particularly, GaN and its related material family are very interesting for harsh environment applications. Beyond earth, GaN based microsystems
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Frequency (RF) systems and capabilities through the research, development, and analysis of specialized Microelectromechanical Systems (MEMS) technologies. The effort focuses on developing cutting-edge MEMS
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for photonic integrated circuits using selective area epitaxial growth. We are also studying novel opto-electronic devices such as photonic bandgap devices, micro-resonator devices, and optical MEMS devices
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SiC for quantum device development and hybrid GaN/SiC optoelectronic sensors or (iii) Development and demonstration of hybrid devices that integrate quantum, opto-electronic, MEMS and/or power
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authority; weapon sensor development; MEMS inertial sensors; direct fire and indirect fire munition flight dynamics; experimental ballistics experience with design and execution of various in-situ diagnostic