Sort by
Refine Your Search
-
Listed
-
Category
-
Country
-
Program
-
Field
-
infrastructure Qualifications We are looking for candidates with experience in several of the following areas: Ultra-high vacuum technology Crystal growth systems (MBE, epitaxy or related technologies) Process
-
growth, such as CVD, PECVD, MOCVD, MBE, or a comparable technique, and experience working with relevant process equipment. Experience characterizing crystalline materials and systematically developing or
-
microLEDs fabrication. Promising preliminary results have been performed, where GaN platelets were successfully obtained by overgrowing MBE-grown GaN NWs on TiN substrates of variable density (figure shown
-
, advanced epitaxial techniques (MOVPE, HVPE, MBE), ion implantation with ultra-high-pressure annealing, and AI/ML-supported process optimization. The research activities are organized into four interacting
-
bulk GaN crystal growth using the ammonothermal method, advanced epitaxial techniques (MOVPE, HVPE, MBE), ion implantation with ultra-high-pressure annealing, and AI/ML-supported process optimization