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research based on various nuclear spectroscopic techniques, such as β-ray spectroscopy (β-NMR, μSR, etc.), γ-ray spectroscopy (γ-TDPAD, Mössbauer spectroscopy, etc), laser spectroscopy, and TOF mass
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Universitat Politècnica de Catalunya (UPC)- BarcelonaTECH | Terrassa, Cataluna | Spain | about 1 month ago
related to staff position within a Research Infrastructure? No Offer Description Mission: Contribute to the UTILE project by developing and applying advanced optical and laser diagnostics to study
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, waveguide optics, nanophotonics, or MIR photonics Optical characterization, laser-based experiments, or spectroscopy Numerical modelling and simulation of optical or multiphysics devices Python
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pulsed laser deposition, atomic layer deposition and liquid-phase epitaxy of substituted garnet films, and comparing directly doped garnets against stacks in which the spin ions are hosted in an adjacent
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project focused on ultrafast spectroscopy of chiral molecular ions, combining expertise in physics, chemistry, engineering, mass spectrometry, and ultrafast science. The position is offered through a
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the spin ions while long optical and spin lifetimes are preserved, using pulsed laser deposition, atomic layer deposition and liquid-phase epitaxy of substituted garnet films, and comparing directly
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couple efficiently to the spin ions while long optical and spin lifetimes are preserved, using pulsed laser deposition, atomic layer deposition and liquid-phase epitaxy of substituted garnet films, and
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expertise in these methods Knowledge of laser safety and experience working safely with laser-based systems Initial knowledge of ICP-MS and analytical hyphenation techniques or a strong willingness to
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suborbital platforms. Such mixers will be important for the advancement of astrophysical heterodyne receivers. The main application of these detectors would be in the THz line spectroscopy of the
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International Semiconductor Laser Conference (ISLC), Orlando, FL, USA, 2024, pp. 1-2, https://doi.org/10.1109/ISLC57752.2024.10717343 L. C. Ahler et al., "High-Efficiency InGaP-on-Silicon Frequency