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) years of hire Minimum four (4) years as a registered EEG/Neurodiagnostic Technologist in a hospital setting Experience in one or more advanced Neurodiagnostic procedures: WADA, ECOG, Laser Ablation
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Inria, the French national research institute for the digital sciences | Gif sur Yvette, le de France | France | 14 days ago
advanced nonlinear optical imaging technique that provides label-free vibrational information about biomedical samples. Broadband laser sources known as “supercontinuum” sources enable the exploration of a
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of health equity. Learn more: https://hospital.uillinois.edu/about-ui-health This position is intended to be eligible for benefits . This includes Health, Dental, Vision, Life Insurance, a Retirement Plan
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between integrated microcombs and state-of-the-art laser frequency combs. By combining ultralow-loss silicon nitride photonics, heterogeneous integration, and advanced system-level experiments, the project
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materials Smart material structures, especially micro-scale devices Additive manufacturing of metallic materials Laser ablation micromachining of metallic materials The successful candidate should have strong
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the MULTIMOC project funded by ANR ASTRID and as part of the GRAFIC project funded by the Nouvelle-Aquitaine Region. The aim is to develop an all-fiber laser source end component, whose special feature will be
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industry. Our group combines precision experiments, advanced imaging, and modeling to uncover the physics of tin droplets under extreme conditions of laser irradiation. We have established a strong track
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of the brightest lightsources in the world? Your responsibilities will include: Provide user support. Maintaining the laser systems and laser diagnostics at FemtoMAX. Developing THz capabilities and performance
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schools in the world. For more details, please view https://www.ntu.edu.sg/mae/research . We are looking for a Research Associate to develop novel AI methods for process monitoring in laser-based metal
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Laser Doping or Pulsed Laser Induced Epitaxy, allowing the fabrication of ultra-doped Si:B layers, well above the B solubility limit in Si. The films will be characterized by X-Ray Diffraction