RAP opportunity at National Institute of Standards and Technology NIST
Functionalizing Semiconductor Surfaces
Location
Physical Measurement Laboratory, Nanoscale Device Characterization Division
opportunity location
50.68.03.B6418 Gaithersburg, MD 20899
NIST only participates in the February and August reviews.
Advisers
name email phone
Christina Ann Hacker [email protected] 301.975.2233
Description
Combining organic monolayers with semiconductor surfaces is of interest for many differing applications including molecular electronics, sensors, and bio-electronics. Monolayers on semiconductor surfaces take advantage of the increased electrical functionality, chemical and structural robustness, wealth of fabrication knowledge, and present a less disruptive technology compared with monolayers on typically used metal substrates. We are investigating various experimental approaches to form organic monolayers on semiconductor surfaces. The resulting films are characterized by using Fourier-transform infrared spectroscopy, spectroscopic ellipsometry, contact angle measurements, and atomic force microscopy. Key aspects of this work involve examination and optimization of alternative functionalization pathways for monolayer formation and thorough characterization of the resulting monolayer. More advanced applications include formation and characterization of electronic devices, incorporation of electrically active nanoparticles, and monolayers specifically tailored to bind differing biological moieties.
key words
Atomic force microscopy; Bio electronics; Infrared spectroscopy; Molecular electronics; Nanotechnology; Self-assembled monolayer; Semiconductor; Sensor; Silicon;
Eligibility
citizenship
Open to U.S. citizens
level
Open to Postdoctoral applicants
Stipend
Base Stipend Travel Allotment Supplementation
$102,415.00 $3,000.00
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