DUV/EUV Nanoscopy for Characterization of Nanoscale Devices

RAP opportunity at National Institute of Standards and Technology     NIST

DUV/EUV Nanoscopy for Characterization of Nanoscale Devices

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.C0861 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.

Advisers
name email phone
Martin Yeungjoon Sohn [email protected] 301-975-3155
Description

The project aims to develop nanoscale optical imaging microscopy using DUV and EUV light sources for accurate characterization of nanoscale structures that contributes to reliable manufacturing of the next generation computing devices. Computational imaging methods such as coherent diffractive imaging, Fourier ptychography, structured illumination techniques, and other super resolution techniques are explored to achieve quantitative reconstruction of nanoscale structure images by developing novel DUV/EUV imaging optics and quantitative phase retrieval algorithms. A qualified candidate would already have some expertise in optical microscopy, computational imaging, instrumentation for optical microscopy, data acquisition and automated stage/camera control, DUV or EUV optics, optical inspection metrology for semiconductor devices.

key words

Fourier Ptychography; Optical Microscopy; Deep Ultraviolet; Extreme Ultraviolet; Nanoscale Imaging; Semiconductor Metrology; Computational Microscopy; Defect Measurement; Dimensional Measurement

Eligibility

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants

Stipend
Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00