Diagnostics for Chemical Vapor and Atomic Layer Deposition Processes

RAP opportunity at National Institute of Standards and Technology     NIST

Diagnostics for Chemical Vapor and Atomic Layer Deposition Processes

Location

Material Measurement Laboratory, Chemical Sciences Division

opportunity location
50.64.61.B3922 Gaithersburg, MD

NIST only participates in the February and August reviews.

Advisers
name email phone
James E. Maslar [email protected] 301.975.4182
Description

Research focuses on the chemical and physical mechanisms of and in situ diagnostic development for thermal chemical vapor deposition (CVD) and atomic layer deposition (ALD), with applications in nanoelectronics fabrication methods. Measurements are performed in diagnostic-compatible CVD and ALD reactors under realistic deposition conditions. Various in situ vibrational spectroscopic techniques are employed to investigate surface and gas phase processes occurring during deposition. Experimental results aid in the development and validation of reaction mechanisms and reactor-scale process models. Available facilities include near-infrared (IR) and mid-IR semiconductor laser-based absorption spectroscopy systems, ultraviolet (UV) to near-IR gas laser-based Raman spectroscopy systems, Fourier-transform IR spectrometers, mass spectrometers, and Nd:YAG laser systems.

key words

Atomic layer deposition; Chemical vapor deposition; Infrared spectroscopy; Laser spectroscopy; Mass spectrometry; Transition metal dichalcogenide CVD;

Eligibility

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants

Stipend
Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00