Research Fellow - GaN Microwave Power Transistor Characterisation and Modelling

Updated: 11 months ago
Location: Guildford, ENGLAND
Deadline: 05 Nov 2017

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Department of Electrical & Electronic Engineering
Location:  Guildford
Salary:  £30,688 to £35,550 per annum
Fixed Term
Post Type:  Full Time
Advert Placed:  Thursday 12 October 2017
Closing Date:  Sunday 05 November 2017
Reference:  083017

The Advanced Technology Institute (ATI) at the University of Surrey is looking to employ a full-time Research Fellow for a fixed term position to participate in the numerically efficient  modelling of gallium-nitride (GaN) transistors. The post-holder will responsible to characterise GaN transistors and develop models for traps that are compatible with a new numerically efficient physics-based  device simulator.   The project is hosted in n3m-labs, a new multiphysics characterisation laboratory for microwave semiconductor devices, founded with a £2M EPSRC Strategic Equpment Grant.  The successful candidate will closely collaborate with academic and industrial partners in the research programme activities.

The post will focus on developing an experimental characterization approach for trap modelling for GaN transistors which is numerically efficient and will be part of a larger numerically efficient numerical model. The candidate will also be responsible for directing and performing the measurements for the model development and  evaluation of the trap model using pulsed-IV, S-parmaeter and loadpull measurements.   In addition the post holder will extract of large-signal models for example X-parameters and DynaFET models.  The successful candidate will also contribute to the wider research effort of the group, publication and presentation of results, and will support the experimental/computational work of PhD students.

In addition to conducting research and acquiring new knowledge and skills, there is a strong ethos of academic support for postdoctoral career development within the research group and the ATI as a whole.

The successful candidate should hold PhD in Physics or Electrical Engineering with relevant experience in semiconductor device model or characterization with an emphasis on trap characterization for III-V devices.   The candidate should have experience with methods for trap characterization, for example, deep level transient spectroscopy and must have a proven research track record including extensive device characterization and preferably - electro-thermal device characterization.  The candidate should also be proficient in Matlab for data analysis and model development

Informal enquires can be made to Dr Peter Aaen ( 

The position is available immediately and it is a fixed term contract until 30 October 2018.

Please note, it is University Policy to offer a starting salary equivalent to Level 3.6 (£30,688) to successful applicants who have been awarded, but are yet to receive, their PhD certificate.  Once the original PhD certificate has been submitted to the local HR Department, the salary will be increased to Level 4.1 (£31,604). 

Further details:

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