Post-doctoral Research Associate MOVPE Growth of Nitride Materials for Power Electronics

A talented and creative postdoctoral researcher is seeking to work in the Cambridge Centre for Gallium Nitride, performing growth of nitride materials and devices for applications in power electronics and characterising the resulting materials. The Cambridge Centre for Gallium Nitride is part of the Department of Materials Science and Metallurgy at the University of Cambridge and also leads the nitride activity within the EPSRC National Epitaxy Facility.

This post is available under the UltrAlGaN Programme Grant (EPSRC) in collaboration with the University of Bristol and other partners. The broad objective of the Programme is the development of high-performance AlGaN solid-state circuit breakers (SSCBs). In this context, the successful candidate will contribute to research on the growth of aluminium and nitrogen-polar AlGaN, the growth of graded AlGaN layers, the regrowth of AlGaN, the growth on bulk AlN substrates, and the realisation of new doping concepts in AlGaN, in particular polarisation doping. The project team also includes the capability for growth by molecular beam epitaxy (MBE), and the successful candidate will exhibit enthusiasm for collaboration across the two growth technologies to achieve optimised materials. The role may also present the opportunity for basic device fabrication to facilitate epitaxy characterisation, and hence experience of device fabrication is desirable.

Responsibilities:

• Manage research activities, generate high-quality data, and develop scientific techniques
• Contribute intellectually to the direction of the nitride research within the Centre
• Present data locally at lab meetings and seminars, and more widely at international scientific conferences
• Draft scientific manuscripts with support from Prof Oliver and contribute to the day-to-day supervision of Masters or PhD students

Requirements:

• Hold a Ph.D. in Materials Science, Physics, Electrical Engineering, or a related area, or be nearing completion of one
• Extensive experience in crystal growth, preferably using metal-organic vapour phase epitaxy (MOVPE)
• A track record of research on nitride semiconductors or closely related materials
• Well-versed in a range of techniques for the characterisation of the structure and properties of materials, with experience in two or more of the following techniques: scanning probe microscopy, x-ray diffraction, scanning electron microscopy, cathodoluminescence spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, Hall probe measurements, or C-V measurements. Candidates with in-depth expertise in scanning probe microscopy are particularly encouraged to apply
• Skills in data presentation, both verbally and in writing
• Committed to collaborative and interdisciplinary research and able to work both independently and as part of a team

Additional Information:

• Applications are particularly welcome from women, black, and minority ethnic candidates
• Fixed-term: The funds for the role are available for 2 years in the first instance

For more information about the Cambridge Centre for Gallium Nitride, visit https://www.gan.msm.cam.ac.uk/ .

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We reserve the right to fill the position with a qualified candidate prior to the conclusion of the advertising period-

Please quote reference LJ40992 on your application and in any correspondence about this vacancy.

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Further information
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