Research Fellow (Ultralow Power Electronics)

Updated: 14 days ago
Location: Kent Ridge,


Job Description

We are looking for a Research Fellow who has experience in realizing two-dimensional (2D) memtransistor / memristor devices and its integration with active selectors for ultralow power electronics applications. 
 

The candidate is expected to: 
•    Develop device designs, fabrication, and extensive characterization of advanced memory/transistors integrated with two-dimensional transition metal dichalcogenides (2D-TMD). 
•    Report experimental results to the Principal Investigator 
•    Publish papers in reputable journals/conferences
•    Assist in preparing progress reports and research proposals
 


Qualifications

•    Possess a recognized PhD degree in Electrical/ Electronic, Physics or Materials Engineering  
•    He/she should ideally have a proven track record of publications in leading journals. 
•    Strong written and oral communication and presentation skills. 
•    Relevant experience in the field of CMOS nano-electronic devices and nano-fabrication technology would be an added advantage. 
•    Possess excellent communication and interpersonal skills to work with various stakeholders. 
•    Meticulous, able to work well under pressure and commitment to meet tight deadlines 
•    Open to fixed-term contract
 


More Information

Location: Kent Ridge Campus

Organization: College of Design and Engineering

Department : Electrical and Computer Engineering

Employee Referral Eligible: No

Job requisition ID : 23985




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