3 electrical-engineering positions at AMOLF in Netherlands

Cathodoluminescence tomography for semiconductor device inspection and analysis

(CL) microscopy, in which we use 1-30 keV electrons in a scanning electron microscope (SEM) to excite nanomaterials. The oscillating electric field carried by the electron serves as a broadband (0-30 eV

Phd – student: Nonlinear metaphotonics for UV semiconductor metrology

.  The need for such a technology comes from the the extreme miniaturisation of micro-electronics,  which places extreme demands not just on nanofabrication, but also on inspection methods that visualize

PhD-student: Cathodoluminescence tomography for semiconductor device inspection and analysis

a scanning electron microscope (SEM) to excite nanomaterials. The oscillating electric field carried by the electron serves as a broadband (0-30 eV) excitation source with 5 nm spatial and 5 fs