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PhD (M/F) : Multiscale Study of High-Quality 3C-SiC Growth by TSM (Travelling Solvent Method)

CNRS | Saint Martin, Midi Pyrenees | France | 3 months ago

Grenoble Alpes), LMI (Université de Lyon), and CEA-LETI (Grenoble). 3C-SiC, the cubic polytype of silicon carbide, is an extremely promising material for medium-voltage power electronics. However, its