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continuity of the device. The proposed integration scheme builds on a CEA-LETI patent that enabled the fabrication of TaN/TiN-based superconducting interconnections, exhibiting a critical temperature (Tc
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. The candidate will work in a multidisciplinary environment covering QD chemistry, device fabrication and integration, and advanced electrical and physicochemical characterizations. As a major
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-40551 Postdoc Grenoble Ingénieur Chercheur device CMOS avancé H/F Ref. : 2026-41127 Permanent contract Isère (38) Grenoble Legal notices Cookies Configure your cookies Accessibility: partial compliance Sitemap Go to top
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device. Another study intends to develop non-thermal electrons distribution which is of trendemous importance for UHI experiments. Durée du contrat (en mois) 2 ans + 2 x 1an renouvelables Description de