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from semiconductor to metallic). The PhD topic described here will address the challenge of controlled substitutional doping and controlled TMDC phase transitions. The work will rely on three different
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device performances. In this project, the PhD candidate will explore different routes to improve the metal contact with the 2D channel. The epitaxy and/or deposition of specific metals, semimetals, 2D
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, the specific nature of the channel to dielectric interface impacts electron transport in modes at variance with silicon technology [3]. The PhD research topic focuses on investigating new innovative
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their performance and variability. One key parameter is carrier mobility which directly influences transistor performance and is impacted by defects and strain within the material. As PhD candidate, you
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crystal grain boundaries from forming inside the active heart of the semiconductor device [4,5]. Therefore, this PhD research explores innovative selective deposition concepts to mitigate TMD crystal
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) and atomically thin complementary FETs (CFETs). (Fig1.) What you will do In this PhD research project, you will explore the nucleation and growth behavior of TMDCs with monolayer thickness control by
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FieldEngineering » Electrical engineeringEducation LevelPhD or equivalent Skills/Qualifications Who you are You have a PhD in Electronics Electrical engineering, or relevant field, or a master with at least 3 years
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engineeringEducation LevelPhD or equivalent Research FieldEngineering » Electrical engineeringEducation LevelPhD or equivalent Skills/Qualifications Who you are You have a PhD in Electronics or Electrical engineering
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LevelPhD or equivalent Skills/Qualifications Who you are You have a PhD degree in Physics, Chemistry, Physical Chemistry or Material Engineering. You have a strong interest in CMP process modeling and