302 Semiconductor Research Corporation Src Master'S Scholarship Program=8oeacrgJWkuPBycLs62hYA positions at NIST in United States
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Description Research opportunities are available to develop and advance measurement methods required for current and future semiconductor manufacturing processes. Areas of particular interest include
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nanowire devices is that many physical phenomena do not scale from the macro to nano regimes. Our research primarily focuses on nanowires grown from wide-bandgap semiconductors especially the group III
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RAP opportunity at National Institute of Standards and Technology NIST CHIPPING away towards accurate properties of semiconductor process gases. Location Material Measurement Laboratory, Applied
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RAP opportunity at National Institute of Standards and Technology NIST Functionalizing Semiconductor Surfaces Location Physical Measurement Laboratory, Nanoscale Device Characterization Division
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RAP opportunity at National Institute of Standards and Technology NIST Augmented Intelligence for Semiconductor Manufacturing Location Engineering Laboratory, Intelligent Systems Division
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interest, including the Franz-Keldysh effect. Materials of interest include layered semiconductors and novel 2D materials. Research is done in close collaboration with other groups at NIST with expertise in
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Description Euv lithography has become a primary manufacturing tool for the semiconductor industry, but new challenges in the development and characterization of EUV resists have emerged as the technology
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Fabrication and Characterization of Active Interfaces Relevant to Wide Band Gap (WBG) Semiconductors Electronics NIST only participates in the February and August reviews. The unique electronic
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techniques for solids are available, which couple a microbeam ionization source with mass spectrometric detection. Secondary ion mass spectrometry (SIMS) is based on the principle that an energetic primary ion
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RAP opportunity at National Institute of Standards and Technology NIST Enabling Advanced Functionalities in Photonics using Low-Dimensional Semiconductors Location Material Measurement