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work will employ Scanning Tunneling Microscopy (STM), which will include studies using milli-Kelvin vector field STM and cryogenic 4-Probe STM, combined with molecular beam epitaxy growth for STM imaging
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spin-polarized scanning tunneling microscopy (STM). The Scholar will have an opportunity to work closely with team members specializing in epitaxial growth and magnetotransport theory, and will play a
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desirable: MBE, DC/AC magnetron sputtering, CVD and/or device fabrications; ARPES, XPS, PEEM, TEM, Raman, photoluminescence, NV magnetometry, AFM and/or STM. For theory/computational PRAs, a broad
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tools (AFM, STM, XRD, TEM, SEM, FIB-SEM), and familiarity with the use of synchrotron based X-ray techniques for interfacial characterization at atomic and molecular/levels. The ideal applicant should
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Scanning Tunneling Microscopy (STM) studies of films and hetero-structures involving transition-metal oxides and other modern materials synthesized in-situ by Molecular Beam Epitaxy. The successful candidate
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films/heterostructures. The project involves molecular beam epitaxy (MBE) growth, angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and spectroscopy (STM/S), nanoscale
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low temperature ultrahigh vacuum (UHV) surface science and scanning probe microscopy (STM/AFM) techniques in close concert with in situ optical/RF quantum measurements at the single spin level. We will take