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field effects transistors (CMOSFET) [2]. The use of atomic thick material comes with new challenges. The bond free surfaces challenge the gate dielectric deposition process with classical techniques. Also
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) was explored and demonstrated some doping effect, however these methods are unstable with time and temperature, difficult to control and/or impossible to integrate within a CMOS process flow. Substitutional
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limits due to the continuous downscaling of the physical size of devices and wires to the nanometer scale. The miniaturization of circuits seems to have reached a possible halt, since transistors can only
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29 Mar 2024 Job Information Organisation/Company IMEC Research Field Physics Other Researcher Profile First Stage Researcher (R1) Country Belgium Application Deadline 15 Apr 2024 - 23:59 (Europe
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on an amorphous starting surface . During this PhD research, you will embark on a journey to reveal how the geometry, chemical composition and critical (physical) dimensions of the design affect where TMD crystals
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your goals. Your Training In addition to the PhD track at the KU Leuven, you will: Learn how to operate 300mm industrial CVD reactors. Gain knowledge from different physical characterization techniques
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research domains: 6G and Wireless Internet of Things communication Automotive CMOS and beyond CMOS 3D system integration Advanced nano-interconnects Advanced patterning and key process steps High-speed