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on the InP-on-Si platform. The work will be done primarily on 4-inch wafers to take advantage of the 4-inch InP process line in the TU/e nanolab cleanroom. But the technology developed will be scalable to much
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the stochastic modelling and reliability assessment process will provide valuable insights into the impact of uncertainties on grid reliability. Finally, in conjunction with the developed edge intelligence
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of the relevant challenges in communication and sensing systems. The group expertise spans from the fundamentals and physics of photonics, optics, the design and fabrication of photonic integrated circuits (PICs
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%. High-quality training programs and other support to grow into a self-aware, autonomous scientific researcher. At TU/e we challenge you to take charge of your own learning process . An excellent technical
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of the maximum allowed neuron fan-in and its cascadability for deducing the physical layer metrics and foresee the ultimate computing metrics in terms of energy efficiency, computational speed and form-factor
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photolithographic process. That’s why a lithographic equipment is kept on its own ecosystem – in a cleanroom and isolated from the hustle and bustle of the outside world. The semiconductor industry largely relies
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Development Scientific Staff Vacancies PhD EngD Support staff Professional Development Support Staff Vacancies Why TU/e Compensation and benefits Application process Support for internationals Working at TU/e
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stringent latency constraints. Besides making use of well-known diversity techniques at the physical layer such as channel coding and multiple antennas, the project will investigate diversity techniques
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scientific researcher. At TU/e we challenge you to take charge of your own learning process . Especially for PhD students, TU/e also grants opportunities for personal development, such as offering every PhD
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the stochastic modelling and reliability assessment process will provide valuable insights into the impact of uncertainties on grid reliability. Finally, in conjunction with the developed edge intelligence