Microwave Materials for High-Speed Microelectronics

RAP opportunity at National Institute of Standards and Technology     NIST

Microwave Materials for High-Speed Microelectronics

Location

Communications Technology Laboratory, Radio Frequency Technology Division

opportunity location
50.67.22.B8436 Boulder, CO

NIST only participates in the February and August reviews.

Advisers
name email phone
Nathan Daniel Orloff [email protected] 303.497.4938
Description

The Communications Technology Laboratories (CTL) at NIST is looking for a research assistant to work developing mm-wave components from complex oxides. This project will involve dc to 110 GHz complex permittivity and permeability characterization with on-wafer techniques, materials modeling (including finite element simulations, and theory), and the development of mm-wave and microwave components. To develop this program in oxide electronics, a successful applicant will have a solid background in programming (Matlab, Python, or equivalent). Experience with any of the following lock-amplifiers, vector network analyzers, resonators is preferred. The preferred candidates will want to gain experience with circuit simulators and device modeling, leveraging fundamental physics to create new technology.

Reference

Lee CH, et al: Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics. Nature 502: 532-536, 2013

key words

Electronics; Microelectronics; Machine learning; Data informatics; Physics; Terahertz; Metrology;

Eligibility

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral applicants

Stipend
Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00