Postdoctoral Researcher in GaN power devices

The role is centred on the development of a novel vertical GaN-on-Si power transistor concept, and will involve device fabrication, material and device characterization and simulation. You will lead device development with a dedicated team of wide bandgap material and device experts toward developing industry-relevant technology demonstrators with immediate impact in low carbon applications, including electric vehicles and renewable energy generation. You will also have the opportunity to present results to the wide range of industrial and academic partners who support the project across the power electronics supply chain. This research position will provide the opportunity to make meaningful impact on power electronics and low carbon technologies.

You will work in the Center for Device Thermography and Reliability (CDTR). The CDTR is a world-leading research center focusing on improving the electrical performance, thermal management, and reliability of novel semiconductor devices, and is active across many EU, US, and UK research programmes. It is funded by the UK Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (RAEng), the US Department of Energy, US Defense Advanced Research Projects Agency, the European Space Agency and other funding agencies as well as by industry.

You will develop vertical GaN transistors for power electronic applications using GaN material on non-native substrates (silicon, sapphire), supplied by project partners. This will include the development of device fabrication process modules in the state-of-the-art cleanroom in the School of Physics, toward integration into a high performance power device. You will characterize electrical and structural properties of devices in the world-renowned CDTR test lab, including reliability and failure analysis, and use TCAD simulation software to analyse the physical mechanisms underpinning device performance, ultimately toward optimization of device designs and fabrication processes. You will also be responsible for writing academic journal papers and attending conferences to present your work, in addition to liaising with project partners across academia and the power electronics industry.

Applicants should have postgraduate (PhD) experience in physics, materials science or engineering, with a good publication record. The position requires expertise or interest in the development of novel electronic materials and devices, semiconductor device fabrication techniques and reliability analysis through use of materials/device simulation software. Cleanroom experience is required. A willingness to work together with, and co-supervise, PhD students of CDTR will be necessary.

Contract type: Open ended with fixed funding until 30/04/2025

Work pattern: Full time

Grade: I/Pathway 2

Salary: £37,099 - £41,732 per annum

School/Unit: School of Physics 

This advert will close at 23:59 GMT on 18/01/2024

Interviews are anticipated to take place on 05/02/24

For informal queries, contact details: Dr. Matthew Smith, [email protected]

We recently launched our strategy  to 2030 tying together our mission, vision and values.

The University of Bristol aims to be a place where everyone feels able to be themselves and do their best in an inclusive working environment where all colleagues can thrive and reach their full potential. We want to attract, develop, and retain individuals with different experiences, backgrounds and perspectives – particularly people of colour, LGBT+ and disabled people - because diversity of people and ideas remains integral to our excellence as a global civic institution.

The role is centred on the development of a novel vertical GaN-on-Si power transistor concept, and will involve device fabrication, material and device characterization and simulation. You will lead device development with a dedicated team of wide bandgap material and device experts toward developing industry-relevant technology demonstrators with immediate impact in low carbon applications, including electric vehicles and renewable energy generation. You will also have the opportunity to present results to the wide range of industrial and academic partners who support the project across the power electronics supply chain. This research position will provide the opportunity to make meaningful impact on power electronics and low carbon technologies.

You will work in the Center for Device Thermography and Reliability (CDTR). The CDTR is a world-leading research center focusing on improving the electrical performance, thermal management, and reliability of novel semiconductor devices, and is active across many EU, US, and UK research programmes. It is funded by the UK Engineering and Physical Sciences Research Council (EPSRC), Royal Academy of Engineering (RAEng), the US Department of Energy, US Defense Advanced Research Projects Agency, the European Space Agency and other funding agencies as well as by industry.

You will develop vertical GaN transistors for power electronic applications using GaN material on non-native substrates (silicon, sapphire), supplied by project partners. This will include the development of device fabrication process modules in the state-of-the-art cleanroom in the School of Physics, toward integration into a high performance power device. You will characterize electrical and structural properties of devices in the world-renowned CDTR test lab, including reliability and failure analysis, and use TCAD simulation software to analyse the physical mechanisms underpinning device performance, ultimately toward optimization of device designs and fabrication processes. You will also be responsible for writing academic journal papers and attending conferences to present your work, in addition to liaising with project partners across academia and the power electronics industry.

Applicants should have postgraduate (PhD) experience in physics, materials science or engineering, with a good publication record. The position requires expertise or interest in the development of novel electronic materials and devices, semiconductor device fabrication techniques and reliability analysis through use of materials/device simulation software. Cleanroom experience is required. A willingness to work together with, and co-supervise, PhD students of CDTR will be necessary.

Contract type: Open ended with fixed funding until 30/04/2025

Work pattern: Full time

Grade: I/Pathway 2

Salary: £37,099 - £41,732 per annum

School/Unit: School of Physics 

This advert will close at 23:59 GMT on 18/01/2024

Interviews are anticipated to take place on 05/02/24

For informal queries, contact details: Dr. Matthew Smith, [email protected]

We recently launched our strategy  to 2030 tying together our mission, vision and values.

The University of Bristol aims to be a place where everyone feels able to be themselves and do their best in an inclusive working environment where all colleagues can thrive and reach their full potential. We want to attract, develop, and retain individuals with different experiences, backgrounds and perspectives – particularly people of colour, LGBT+ and disabled people - because diversity of people and ideas remains integral to our excellence as a global civic institution.